收藏本站
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
8. Application information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up
to two unidirectional data or signal lines from the damage caused by ESD and surge
pulses. The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground. The devices provide a surge capability of 40 W per line
for a 10/1000 μ s waveform.
line 1 to be protected
line 2 to be protected
MMBZxVCL/VDL
GND
unidirectional protection
of two lines
line 1 to be protected
MMBZxVCL/VDL
GND
bidirectional protection
of one line
006aab330
Fig 9.
Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
MMBZXVCL_MMBZXVDL_SER_1
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
10 of 15
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MMBZ27VCL-7 TVS 27V 40W CC UNI-DIR SOT23-3
MMBZ27VCWT1G DIODE ZENER DUAL 40W 27V SC70-3
MMBZ33VAL,215 DIODE ESD PROT DBL 26V SOT-23
MMBZ5V6B IC TVS ZENER 24W SOT-23
MMBZ6V8AL-7-F TVS 24W 4.5V CA UNIDIR SOT23-3
MMQA18VT1G TVS QUAD MI CA 24W 18V SC74-6
MNR02M0APJ220 RES ARRAY 22 OHM 2 RES 0404
MNR14ERAPJ101 RES ARRAY 100 OHM 4 RES 1206
相关代理商/技术参数
MMBZ15VDL/DG 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDL_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDL_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ15VDL-7 功能描述:TVS 二极管 - 瞬态电压抑制器 225MW 12.8V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
MMBZ15VDL-7-F 功能描述:TVS 二极管 - 瞬态电压抑制器 225MW 12.8V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
MMBZ15VDLDG 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
MMBZ15VDLT1 功能描述:TVS二极管阵列 15V 225mW Dual RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ15VDLT1_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:40 Watt Peak Power Zener Transient Voltage Suppressors